All Transistors. BCR583 Datasheet

 

BCR583 Datasheet and Replacement


   Type Designator: BCR583
   SMD Transistor Code: XMs
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.33 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
 

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BCR583 Datasheet (PDF)

 ..1. Size:35K  siemens
 bcr583.pdf pdf_icon

BCR583

BCR 583PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k,R2=10k)Type Marking Ordering Code Pin Configuration PackageBCR 583 XMs Q62702-C2385 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage

 ..2. Size:136K  infineon
 bcr583.pdf pdf_icon

BCR583

BCR583PNP Silicon Digital Transistor Built in bias resistor (R1= 10 k, R2= 10 k)23 Pb-free (RoHS compliant) package1)1 Qualified according AEC Q101C3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR583 XMs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage V

Datasheet: BCR523 , BCR533 , BCR553 , BCR555 , BCR562 , BCR569 , BCR571 , BCR573 , A1013 , BCV26 , BCV27 , BCV28 , BCV29 , BCV46 , BCV47 , BCV48 , BCV49 .

History: MT3S35FS | NSBC114TDP6T5G | CENU45 | DME20B01 | BSY78

Keywords - BCR583 transistor datasheet

 BCR583 cross reference
 BCR583 equivalent finder
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