BCW81R Datasheet, Equivalent, Cross Reference Search
Type Designator: BCW81R
SMD Transistor Code: K31
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: SOT23
BCW81R Transistor Equivalent Substitute - Cross-Reference Search
BCW81R Datasheet (PDF)
bcw81.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088BCW81NPN general purpose transistor1997 Apr 02Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor BCW81FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 ba
bcw81.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW81SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingBCW81 = K3Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCB0 max. 50 VCollectoremitter voltage (open base) V
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
