BCW81R Specs and Replacement

Type Designator: BCW81R

SMD Transistor Code: K31

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: SOT23

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BCW81R datasheet

 9.1. Size:50K  philips

 bcw81.pdf pdf_icon

BCW81R

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW81 NPN general purpose transistor 1997 Apr 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor BCW81 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 ba... See More ⇒

 9.2. Size:202K  cdil

 bcw81.pdf pdf_icon

BCW81R

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors Marking BCW81 = K3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCB0 max. 50 V Collector emitter voltage (open base) V... See More ⇒

Detailed specifications: BCW79-10, BCW79-16, BCW79-25, BCW80, BCW80-10, BCW80-16, BCW80-25, BCW81, TIP3055, BCW82, BCW82A, BCW82B, BCW83, BCW83A, BCW83B, BCW83C, BCW84

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