All Transistors. BCW81R Datasheet

 

BCW81R Datasheet and Replacement


   Type Designator: BCW81R
   SMD Transistor Code: K31
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT23
 

 BCW81R Substitution

   - BJT ⓘ Cross-Reference Search

   

BCW81R Datasheet (PDF)

 9.1. Size:50K  philips
 bcw81.pdf pdf_icon

BCW81R

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088BCW81NPN general purpose transistor1997 Apr 02Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor BCW81FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 ba

 9.2. Size:202K  cdil
 bcw81.pdf pdf_icon

BCW81R

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW81SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingBCW81 = K3Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCB0 max. 50 VCollectoremitter voltage (open base) V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCW80-10 | BCX5310

Keywords - BCW81R transistor datasheet

 BCW81R cross reference
 BCW81R equivalent finder
 BCW81R lookup
 BCW81R substitution
 BCW81R replacement

 

 
Back to Top

 


 
.