BD112 Specs and Replacement
Type Designator: BD112
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 165 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
BD112 Substitution
- BJT ⓘ Cross-Reference Search
BD112 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD112 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for g... See More ⇒
Detailed specifications: BD109-16, BD109-6, BD109A, BD109B, BD109C, BD109D, BD111, BD111A, 2222A, BD113, BD115, BD116, BD117, BD118, BD119, BD120, BD121
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