All Transistors. BD112 Datasheet

 

BD112 Datasheet and Replacement


   Type Designator: BD112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
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BD112 Datasheet (PDF)

 ..1. Size:179K  inchange semiconductor
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BD112

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD112DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for g

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KRA567U | UN621K | D11C1053 | CHDTA115TEGP | ZTX300 | BD544D | D7D13

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