BD112 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD112
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
BD112 Transistor Equivalent Substitute - Cross-Reference Search
BD112 Datasheet (PDF)
..1. Size:179K inchange semiconductor
bd112.pdf
bd112.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD112DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for g
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
