BD115 Specs and Replacement
Type Designator: BD115
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 245 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 22
Package: TO39
BD115 Substitution
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BD115 datasheet
BD115 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 180V dia. IC = 0.15A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCEO 180 V Collector Emitter Voltage (RBE... See More ⇒
Detailed specifications: BD109A, BD109B, BD109C, BD109D, BD111, BD111A, BD112, BD113, NJW0281G, BD116, BD117, BD118, BD119, BD120, BD121, BD123, BD124
Keywords - BD115 pdf specs
BD115 cross reference
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