BD115 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD115
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 245 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 22
Noise Figure, dB: -
Package: TO39
BD115 Transistor Equivalent Substitute - Cross-Reference Search
BD115 Datasheet (PDF)
bd115.pdf
BD115Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 180V dia.IC = 0.15A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
bd115.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Emitter Voltage VCEO 180 VCollector Emitter Voltage (RBE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
