All Transistors. BD116 Datasheet

 

BD116 Datasheet and Replacement


   Type Designator: BD116
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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BD116 Datasheet (PDF)

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BD116

INCHAisc Silicon NPN Power Transistor BD116DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for RF power and gener

Datasheet: BD109B , BD109C , BD109D , BD111 , BD111A , BD112 , BD113 , BD115 , NJW0281G , BD117 , BD118 , BD119 , BD120 , BD121 , BD123 , BD124 , BD124A .

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