All Transistors. BD117 Datasheet

 

BD117 Datasheet and Replacement


   Type Designator: BD117
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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BD117 Datasheet (PDF)

 ..1. Size:193K  inchange semiconductor
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BD117

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD117DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 3ACE(sat CGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for g

Datasheet: BD109C , BD109D , BD111 , BD111A , BD112 , BD113 , BD115 , BD116 , TIP2955 , BD118 , BD119 , BD120 , BD121 , BD123 , BD124 , BD124A , BD127 .

History: BD696A | TEC8013F | MJE721 | NPS5401R | FFB3904D | LDTA144TET1G | 2SC1298

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