BD117 Specs and Replacement
Type Designator: BD117
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
BD117 Substitution
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BD117 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD117 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 3A CE(sat C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for g... See More ⇒
Detailed specifications: BD109C, BD109D, BD111, BD111A, BD112, BD113, BD115, BD116, 2SD669A, BD118, BD119, BD120, BD121, BD123, BD124, BD124A, BD127
Keywords - BD117 pdf specs
BD117 cross reference
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History: BD123
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