BD123 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD123
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BD123 Transistor Equivalent Substitute - Cross-Reference Search
BD123 Datasheet (PDF)
0.1. Size:939K semikron
skm200gbd123d1s.pdf
skm200gbd123d1s.pdf
SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) UnitsV 1200 VCESSKM 200 GBD 123 D 1SV R = 20 k 1200 VCGR GEI T = 25/80 C 200 / 180 AC caseI Tcase = 25/80 C; tp = 1 ms 400 / 360 ACMVGES 20 VPtot per IGBT, Tcase = 25 C 1380 WT , (T ) 40 . . .+150 (125) Cj stgVisol AC, 1 min. 2 500 7) Vhumidity DIN 40 040 Class Fc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
