BD123 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD123 Specs and Replacement

Type Designator: BD123

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

BD123 Substitution

- BJT ⓘ Cross-Reference Search

BD123 datasheet

0.1. Size:939K semikron

skm200gbd123d1s.pdf pdf_icon

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units V 1200 V CES SKM 200 GBD 123 D 1S V R = 20 k 1200 V CGR GE I T = 25/80 C 200 / 180 A C case I Tcase = 25/80 C; tp = 1 ms 400 / 360 A CM VGES 20 V Ptot per IGBT, Tcase = 25 C 1380 W T , (T ) 40 . . .+150 (125) C j stg Visol AC, 1 min. 2 500 7) V humidity DIN 40 040 Class F c... See More ⇒

Detailed specifications: BD113, BD115, BD116, BD117, BD118, BD119, BD120, BD121, BC556, BD124, BD124A, BD127, BD128, BD129, BD130, BD130Y, BD131