BD162 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD162 Specs and Replacement

Type Designator: BD162

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

BD162 Substitution

- BJT ⓘ Cross-Reference Search

BD162 datasheet

..1. Size:184K inchange semiconductor

bd162.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD162 DESCRIPTION Continuous Collector Current -I = 4A C Excellent Safe Operating Area Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒

Detailed specifications: BD1550, BD156, BD1560, BD157, BD158, BD159, BD160, BD161, 8550, BD163, BD165, BD166, BD167, BD168, BD169, BD170, BD171