BD162 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD162
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BD162 Transistor Equivalent Substitute - Cross-Reference Search
BD162 Datasheet (PDF)
..1. Size:184K inchange semiconductor
bd162.pdf
bd162.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD162DESCRIPTIONContinuous Collector Current -I = 4ACExcellent Safe Operating AreaGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
