BD229-10 Datasheet. Specs and Replacement

Type Designator: BD229-10  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: TO126

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BD229-10 datasheet

 9.1. Size:754K  no

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BD229-10

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 9.2. Size:142K  inchange semiconductor

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BD229-10

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD227 -45 VCBO Collector-Base Voltage BD229 -60 V ... See More ⇒

Detailed specifications: BD227-10, BD227-16, BD227-6, BD228, BD228-10, BD228-16, BD228-6, BD229, S9013, BD229-16, BD229-6, BD230, BD230-10, BD230-16, BD230-6, BD231, BD231-10

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