BD229-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD229-10
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO126
BD229-10 Transistor Equivalent Substitute - Cross-Reference Search
BD229-10 Datasheet (PDF)
9.1. Size:142K inchange semiconductor
bd227 bd229 bd231.pdf
bd227 bd229 bd231.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD227 -45 VCBO Collector-Base Voltage BD229 -60 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
