BD232G Datasheet. Specs and Replacement

Type Designator: BD232G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO202

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BD232G datasheet

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BD232G

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BD232G

isc Silicon NPN Power Transistor BD232 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power output stages and line driver in TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

Detailed specifications: BD230-10, BD230-16, BD230-6, BD231, BD231-10, BD231-16, BD231-6, BD232, BC549, BD233, BD233-10, BD233-16, BD233-6, BD233G, BD234, BD234-10, BD234-16

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