All Transistors. BD232G Datasheet

 

BD232G Datasheet and Replacement


   Type Designator: BD232G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO202
 

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BD232G Datasheet (PDF)

 9.1. Size:89K  semelab
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BD232G

 9.2. Size:205K  inchange semiconductor
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BD232G

isc Silicon NPN Power Transistor BD232DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power output stages and line driverin TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: BD230-10 , BD230-16 , BD230-6 , BD231 , BD231-10 , BD231-16 , BD231-6 , BD232 , 2222A , BD233 , BD233-10 , BD233-16 , BD233-6 , BD233G , BD234 , BD234-10 , BD234-16 .

History: BD233G

Keywords - BD232G transistor datasheet

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