BD263B Datasheet. Specs and Replacement
Type Designator: BD263B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD263B Substitution
- BJT ⓘ Cross-Reference Search
BD263B datasheet
isc Silicon NPN Darlington Power Transistor BD263 DESCRIPTION Collector Emitter Breakdown Voltage V = 60V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5 A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM... See More ⇒
Detailed specifications: BD261, BD262, BD262A, BD262B, BD262C, BD262L, BD263, BD263A, 2N2222, BD263C, BD263L, BD264, BD264A, BD264B, BD264L, BD265, BD265A
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