All Transistors. BD263B Datasheet

 

BD263B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD263B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126

 BD263B Transistor Equivalent Substitute - Cross-Reference Search

   

BD263B Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
 bd263.pdf

BD263B BD263B

isc Silicon NPN Darlington Power Transistor BD263DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier applications.ABSOLUTE MAXIMUM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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