BD263C Specs and Replacement
Type Designator: BD263C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD263C Substitution
BD263C datasheet
9.1. Size:207K inchange semiconductor
bd263.pdf
bd263.pdf
isc Silicon NPN Darlington Power Transistor BD263 DESCRIPTION Collector Emitter Breakdown Voltage V = 60V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5 A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM... See More ⇒
Detailed specifications: BD262 , BD262A , BD262B , BD262C , BD262L , BD263 , BD263A , BD263B , 2N5551 , BD263L , BD264 , BD264A , BD264B , BD264L , BD265 , BD265A , BD265B .
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