All Transistors. BD263C Datasheet

 

BD263C Datasheet and Replacement


   Type Designator: BD263C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126
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BD263C Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
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BD263C

isc Silicon NPN Darlington Power Transistor BD263DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier applications.ABSOLUTE MAXIMUM

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG332 | 2N2904 | DTC124EEB | ECG185 | 2N5784 | 2SA1488 | NXP3875G

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