BD286 Specs and Replacement
Type Designator: BD286
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO126
BD286 Substitution
- BJT ⓘ Cross-Reference Search
BD286 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD286 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -45V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V )= -0.6V(Max)@ I = -2A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switchi... See More ⇒
Detailed specifications: BD278A, BD279, BD280, BD281, BD282, BD283, BD284, BD285, 2SA1837, BD287, BD288, BD291, BD292, BD293, BD294, BD295, BD296
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