BD286 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD286
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO126
BD286 Transistor Equivalent Substitute - Cross-Reference Search
BD286 Datasheet (PDF)
..1. Size:183K inchange semiconductor
bd286.pdf
bd286.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD286DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -45V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V )= -0.6V(Max)@ I = -2ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchi
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
