BD286 Datasheet and Replacement
Type Designator: BD286
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO126
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BD286 Datasheet (PDF)
bd286.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD286DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -45V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V )= -0.6V(Max)@ I = -2ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BCY59-7 | 2SC976 | BLX20 | BCX38 | DT32-1050 | DDTC115TE | BD612
Keywords - BD286 transistor datasheet
BD286 cross reference
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History: BCY59-7 | 2SC976 | BLX20 | BCX38 | DT32-1050 | DDTC115TE | BD612



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