BD303B Specs and Replacement
Type Designator: BD303B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
BD303B Substitution
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BD303B datasheet
isc Silicon NPN Power Transistor BD303 DESCRIPTION DC Current Gain - h = 30(Min.)@ I = 2A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Complement to Type BD304 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.... See More ⇒
Detailed specifications: BD301, BD301A, BD301B, BD302, BD302A, BD302B, BD303, BD303A, A1013, BD304, BD304A, BD304B, BD306, BD306A, BD306B, BD307, BD307A
Keywords - BD303B pdf specs
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