All Transistors. BD303B Datasheet

 

BD303B Datasheet and Replacement


   Type Designator: BD303B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 55 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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BD303B Datasheet (PDF)

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BD303B

isc Silicon NPN Power Transistor BD303DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOComplement to Type BD304Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages up to 25W, verticaldeflection circuits in color TV receivers.

Datasheet: BD301 , BD301A , BD301B , BD302 , BD302A , BD302B , BD303 , BD303A , 2SD313 , BD304 , BD304A , BD304B , BD306 , BD306A , BD306B , BD307 , BD307A .

History: 2SB605 | 2N1564 | 2SC4446 | 2SD637 | C742 | M1 | KSA1156O

Keywords - BD303B transistor datasheet

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