BD311 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD311
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD311 Transistor Equivalent Substitute - Cross-Reference Search
BD311 Datasheet (PDF)
..1. Size:206K inchange semiconductor
bd311.pdf
bd311.pdf
isc Silicon NPN Power Transistor BD311DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CComplement to Type BD312Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 60 w
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
