All Transistors. BD311 Datasheet

 

BD311 Datasheet and Replacement


   Type Designator: BD311
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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BD311 Datasheet (PDF)

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BD311

isc Silicon NPN Power Transistor BD311DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CComplement to Type BD312Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 60 w

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KT9101AC | 2SB1188SQ-R | FMBM5551 | DTA144WET1G | 2N5762 | 3DF5 | MPSA92M

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