BD311 Specs and Replacement
Type Designator: BD311
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD311 Substitution
- BJT ⓘ Cross-Reference Search
BD311 datasheet
isc Silicon NPN Power Transistor BD311 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 5A CE(sat C Complement to Type BD312 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high quality amplifiers operating up to 60 w... See More ⇒
Detailed specifications: BD304A, BD304B, BD306, BD306A, BD306B, BD307, BD307A, BD307B, NJW0281G, BD312, BD312A-16, BD313, BD314, BD315, BD316, BD317, BD318
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