All Transistors. BD312 Datasheet

 

BD312 Datasheet and Replacement


   Type Designator: BD312
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

 BD312 Substitution

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BD312 Datasheet (PDF)

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BD312

isc Silicon PNP Power Transistor BD312DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = -5AFE CCollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -5ACE(sat CComplement to Type BD311Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 6

Datasheet: BD304B , BD306 , BD306A , BD306B , BD307 , BD307A , BD307B , BD311 , NJW0281G , BD312A-16 , BD313 , BD314 , BD315 , BD316 , BD317 , BD318 , BD320 .

History: SD403 | 2SC132 | BC337-16 | MJE2483 | BD313 | 2SC1284 | 2N1622

Keywords - BD312 transistor datasheet

 BD312 cross reference
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