BD312 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD312
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD312 Transistor Equivalent Substitute - Cross-Reference Search
BD312 Datasheet (PDF)
..1. Size:208K inchange semiconductor
bd312.pdf
bd312.pdf
isc Silicon PNP Power Transistor BD312DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = -5AFE CCollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -5ACE(sat CComplement to Type BD311Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 6
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
