All Transistors. BD312 Datasheet

 

BD312 Datasheet and Replacement


   Type Designator: BD312
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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BD312 Datasheet (PDF)

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BD312

isc Silicon PNP Power Transistor BD312DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = -5AFE CCollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -5ACE(sat CComplement to Type BD311Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 6

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDT30C | KTC2553 | BDX14 | TIPP112 | KSR1002 | TI815 | BD744E

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