BD312A-16 Specs and Replacement
Type Designator: BD312A-16
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO237
BD312A-16 Substitution
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BD312A-16 datasheet
isc Silicon PNP Power Transistor BD312 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h = 25(Min.)@I = -5A FE C Collector-Emitter Saturation Voltage- V )= -1.0 V(Max)@ I = -5A CE(sat C Complement to Type BD311 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high quality amplifiers operating up to 6... See More ⇒
Detailed specifications: BD306, BD306A, BD306B, BD307, BD307A, BD307B, BD311, BD312, 2SD669A, BD313, BD314, BD315, BD316, BD317, BD318, BD320, BD320A
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