All Transistors. BD313 Datasheet

 

BD313 Datasheet and Replacement


   Type Designator: BD313
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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BD313 Datasheet (PDF)

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BD313

isc Silicon NPN Power Transistor BD313DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CComplement to Type BD314Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 60 w

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BC239 | 2N3783 | 2SC4834 | 2SB688 | KSA1013R | BC639-10 | 2SD965K

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