BD313 Specs and Replacement
Type Designator: BD313
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD313 Substitution
- BJT ⓘ Cross-Reference Search
BD313 datasheet
isc Silicon NPN Power Transistor BD313 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h = 25(Min.)@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 5A CE(sat C Complement to Type BD314 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high quality amplifiers operating up to 60 w... See More ⇒
Detailed specifications: BD306A , BD306B , BD307 , BD307A , BD307B , BD311 , BD312 , BD312A-16 , TIP2955 , BD314 , BD315 , BD316 , BD317 , BD318 , BD320 , BD320A , BD320B .
History: HS600K | HI117 | HIT562 | HIT667 | HS882 | HIT468 | HM5401
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