All Transistors. BD313 Datasheet

 

BD313 Datasheet and Replacement


   Type Designator: BD313
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

 BD313 Substitution

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BD313 Datasheet (PDF)

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BD313

isc Silicon NPN Power Transistor BD313DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CComplement to Type BD314Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 60 w

Datasheet: BD306A , BD306B , BD307 , BD307A , BD307B , BD311 , BD312 , BD312A-16 , 2SD669 , BD314 , BD315 , BD316 , BD317 , BD318 , BD320 , BD320A , BD320B .

Keywords - BD313 transistor datasheet

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