BD315 Specs and Replacement
Type Designator: BD315
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD315 Substitution
- BJT ⓘ Cross-Reference Search
BD315 datasheet
isc Silicon NPN Power Transistor BD315 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h = 25(Min.)@I = 8A FE C Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 8A CE(sat C Complement to Type BD316 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high quality amplifiers operating up to 100 ... See More ⇒
Detailed specifications: BD307, BD307A, BD307B, BD311, BD312, BD312A-16, BD313, BD314, 2SC2240, BD316, BD317, BD318, BD320, BD320A, BD320B, BD320C, BD321
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