BD315 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD315
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD315 Transistor Equivalent Substitute - Cross-Reference Search
BD315 Datasheet (PDF)
..2. Size:205K inchange semiconductor
bd315.pdf
bd315.pdf
isc Silicon NPN Power Transistor BD315DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = 8AFE CCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 8ACE(sat CComplement to Type BD316Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 100
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
