All Transistors. BD329 Datasheet

 

BD329 Datasheet and Replacement


   Type Designator: BD329
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO126
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BD329 Datasheet (PDF)

 ..1. Size:52K  philips
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BD329

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD329NPN power transistor1997 Mar 07Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN power transistor BD329FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collector, c

 ..2. Size:208K  inchange semiconductor
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BD329

isc Silicon NPN Power Transistor BD329DESCRIPTIONDC Current Gain-: h = 85~375(Min)@ I = 0.5AFE CCollector-Emitter Sustaining Voltage -: V = 20V(Min)CEO(SUS)Complement to type BD330Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially for battery equipped applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3059 | BFV73N | 2SC3068 | NSM6056M | 3DD5G | 2SB1557 | DTL1642

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