BD329 Specs and Replacement
Type Designator: BD329
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO126
BD329 Substitution
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BD329 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD329 NPN power transistor 1997 Mar 07 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN power transistor BD329 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 emitter 2 collector, c... See More ⇒
isc Silicon NPN Power Transistor BD329 DESCRIPTION DC Current Gain- h = 85 375(Min)@ I = 0.5A FE C Collector-Emitter Sustaining Voltage - V = 20V(Min) CEO(SUS) Complement to type BD330 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: BD322A , BD322B , BD322C , BD323 , BD323A , BD323B , BD323C , BD328 , BD333 , BD330 , BD331 , BD332 , BD333 , BD334 , BD335 , BD336 , BD337 .
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