All Transistors. BD330 Datasheet

 

BD330 Datasheet and Replacement


   Type Designator: BD330
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO126
 

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BD330 Datasheet (PDF)

 ..1. Size:49K  philips
 bd330.pdf pdf_icon

BD330

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD330PNP power transistor1999 Apr 26Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationPNP power transistor BD330FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mount

 ..2. Size:210K  inchange semiconductor
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BD330

isc Silicon PNP Power Transistor BD330DESCRIPTIONDC Current Gain-: h = 85~375(Min)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage -: V = -20V(Min)CEO(SUS)Complement to type BD329Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially for battery equipped applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

Datasheet: BD322B , BD322C , BD323 , BD323A , BD323B , BD323C , BD328 , BD329 , BC547 , BD331 , BD332 , BD333 , BD334 , BD335 , BD336 , BD337 , BD338 .

History: ECG397 | 2N710A | 2N183 | 2N606 | 2SB117 | SD168 | MJE224

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