All Transistors. BD330 Datasheet

 

BD330 Datasheet and Replacement


   Type Designator: BD330
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO126
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BD330 Datasheet (PDF)

 ..1. Size:49K  philips
 bd330.pdf pdf_icon

BD330

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD330PNP power transistor1999 Apr 26Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationPNP power transistor BD330FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mount

 ..2. Size:210K  inchange semiconductor
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BD330

isc Silicon PNP Power Transistor BD330DESCRIPTIONDC Current Gain-: h = 85~375(Min)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage -: V = -20V(Min)CEO(SUS)Complement to type BD329Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEspecially for battery equipped applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NB022FY | 2N1975 | BT2944 | CTP3551 | 2N5811 | 2SC1424 | BT2951AT

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