BD330 Specs and Replacement
Type Designator: BD330
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO126
BD330 Substitution
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BD330 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mount... See More ⇒
isc Silicon PNP Power Transistor BD330 DESCRIPTION DC Current Gain- h = 85 375(Min)@ I = -0.5A FE C Collector-Emitter Sustaining Voltage - V = -20V(Min) CEO(SUS) Complement to type BD329 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Detailed specifications: BD322B , BD322C , BD323 , BD323A , BD323B , BD323C , BD328 , BD329 , BDT88 , BD331 , BD332 , BD333 , BD334 , BD335 , BD336 , BD337 , BD338 .
Keywords - BD330 pdf specs
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History: BD342 | BD332
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