All Transistors. BD332 Datasheet

 

BD332 Datasheet and Replacement


   Type Designator: BD332
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126
 

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BD332 Datasheet (PDF)

 ..1. Size:321K  st
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BD332

 ..2. Size:210K  inchange semiconductor
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BD332

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD332DESCRIPTIONHigh DC Current GainComplement to type BD331Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPNP epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: BD323 , BD323A , BD323B , BD323C , BD328 , BD329 , BD330 , BD331 , TIP41C , BD333 , BD334 , BD335 , BD336 , BD337 , BD338 , BD342 , BD343 .

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