BD332 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD332
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD332 Transistor Equivalent Substitute - Cross-Reference Search
BD332 Datasheet (PDF)
..2. Size:210K inchange semiconductor
bd332.pdf
bd332.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD332DESCRIPTIONHigh DC Current GainComplement to type BD331Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPNP epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
