BD332 Specs and Replacement
Type Designator: BD332
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD332 Substitution
- BJT ⓘ Cross-Reference Search
BD332 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD332 DESCRIPTION High DC Current Gain Complement to type BD331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: BD323 , BD323A , BD323B , BD323C , BD328 , BD329 , BD330 , BD331 , BC547 , BD333 , BD334 , BD335 , BD336 , BD337 , BD338 , BD342 , BD343 .
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