All Transistors. BD350B Datasheet

 

BD350B Datasheet and Replacement


   Type Designator: BD350B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 160 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BD350B Datasheet (PDF)

 9.1. Size:182K  inchange semiconductor
 bd350.pdf pdf_icon

BD350B

INCHANGE Semiconductorisc Silicon PNP Power Transistors BD350DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -15ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG185 | DTC124EEB | 2N2904 | ECG332 | NXP3875G | 2N5784 | 2SA1488

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