BD354B pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD354B Specs and Replacement

Type Designator: BD354B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO66

BD354B Substitution

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BD354B datasheet

9.1. Size:132K tesla

kd135 kd136 kd137 kd138 kd139 kd140 bc211 bc313 bd354 bd355 kd333 kd334 kd335 kd336 kd337 kd338.pdf pdf_icon

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9.2. Size:199K inchange semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor BD354 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 2A CE(sat C Excellent Safe Operating Area Complement to Type BD355 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for ... See More ⇒

Detailed specifications: BD350, BD350A, BD350B, BD351, BD351A, BD351B, BD354, BD354A, BC557, BD354C, BD355, BD355A, BD355B, BD355C, BD356, BD357, BD358