All Transistors. BD354B Datasheet

 

BD354B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD354B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO66

 BD354B Transistor Equivalent Substitute - Cross-Reference Search

   

BD354B Datasheet (PDF)

 9.1. Size:132K  tesla
 kd135 kd136 kd137 kd138 kd139 kd140 bc211 bc313 bd354 bd355 kd333 kd334 kd335 kd336 kd337 kd338.pdf

BD354B

 9.2. Size:199K  inchange semiconductor
 bd354.pdf

BD354B BD354B

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD354DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 2ACE(sat CExcellent Safe Operating AreaComplement to Type BD355Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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