BD369 Specs and Replacement
Type Designator: BD369
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BD369 Substitution
- BJT ⓘ Cross-Reference Search
BD369 datasheet
isc Silicon PNP Power Transistors BD369 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )=-1.0V(Max)@ I =-10A CE(sat C DC Current Gain- h = 20(Min)@I =-10A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier and switching applications. A... See More ⇒
Detailed specifications: BD363, BD363A, BD363B, BD364, BD365, BD366, BD367, BD368, BC546, BD370, BD370-10, BD370-16, BD370-6, BD370A, BD370A-10, BD370A-16, BD370A-25
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