BD375-10 Datasheet. Specs and Replacement

Type Designator: BD375-10  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: TO126

 BD375-10 Substitution

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BD375-10 datasheet

 9.1. Size:42K  fairchild semi

 bd375 bd377 bd379.pdf pdf_icon

BD375-10

BD375/377/379 Medium Power Linear and Switching Applications Complement to BD376, BD378 and BD380 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD375 50 V BD377 75 V BD379 100 V VCEO Collector-Emitter Voltage BD375... See More ⇒

 9.2. Size:251K  shantou-huashan

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BD375-10

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 9.3. Size:157K  inchange semiconductor

 bd375 bd377 bd379.pdf pdf_icon

BD375-10

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD375/377/379 DESCRIPTION DC Current Gain- hFE= 20(Min)@ IC= 1A Complement to Type BD376/378/380 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD375 50 VCBO Collector-Base Voltage BD377 75 V ... See More ⇒

Detailed specifications: BD373C-10, BD373C-16, BD373C-6, BD373D, BD373D-10, BD373D-16, BD373D-6, BD375, S8050, BD375-16, BD375-25, BD375-6, BD376, BD376-10, BD376-16, BD376-25, BD376-6

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