All Transistors. BD410 Datasheet


BD410 Datasheet, Equivalent, Cross Reference Search

Type Designator: BD410

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 325 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO126

BD410 Transistor Equivalent Substitute - Cross-Reference Search


BD410 Datasheet (PDF)

..1. bd410.pdf Size:167K _cdil

BD410 BD410

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR BD410TO-126 Plastic PackageECBABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 500 VCollector -Emitter Voltage VCEO 325 VEmitter Base Voltage VEBO 5.0 VContinuous Collector Current IC 1.0 APeak Collector Curr

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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