All Transistors. BD410 Datasheet

 

BD410 Datasheet and Replacement


   Type Designator: BD410
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 325 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO126
 

 BD410 Substitution

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BD410 Datasheet (PDF)

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BD410

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR BD410TO-126 Plastic PackageECBABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 500 VCollector -Emitter Voltage VCEO 325 VEmitter Base Voltage VEBO 5.0 VContinuous Collector Current IC 1.0 APeak Collector Curr

Datasheet: BD388 , BD389 , BD390 , BD400 , BD401 , BD402 , BD403 , BD404 , A1013 , BD411 , BD412 , BD413 , BD414 , BD415 , BD416 , BD417 , BD418 .

History: KTB1151 | 2N1613A

Keywords - BD410 transistor datasheet

 BD410 cross reference
 BD410 equivalent finder
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