BD410 Specs and Replacement
Type Designator: BD410
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO126
BD410 Substitution
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BD410 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR BD410 TO-126 Plastic Package E C B ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 500 V Collector -Emitter Voltage VCEO 325 V Emitter Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Peak Collector Curr... See More ⇒
Detailed specifications: BD388 , BD389 , BD390 , BD400 , BD401 , BD402 , BD403 , BD404 , SS8050 , BD411 , BD412 , BD413 , BD414 , BD415 , BD416 , BD417 , BD418 .
Keywords - BD410 pdf specs
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