All Transistors. BD501A Datasheet

 

BD501A Datasheet and Replacement


   Type Designator: BD501A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
 

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BD501A Datasheet (PDF)

 9.1. Size:105K  inchange semiconductor
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BD501A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD501/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VA

 9.2. Size:191K  inchange semiconductor
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BD501A

isc Silicon NPN Power Transistors BD501/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 50V(Min)CEO(SUS)80V(Min)High Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS(T =

Datasheet: BD477A , BD477B , BD487 , BD488 , BD500 , BD500A , BD500B , BD501 , 13003 , BD501B , BD505 , BD505-1 , BD505-5 , BD506 , BD506-1 , BD506-5 , BD507 .

History: 2SC3175 | ECG233 | 2SC3325Y | BUL810 | 2SB559F | BUL76B

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