BD501A Datasheet. Specs and Replacement

Type Designator: BD501A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

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BD501A datasheet

 9.1. Size:105K  inchange semiconductor

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BD501A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD501/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 50V(Min) 80V(Min) High Power Dissipation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VA... See More ⇒

 9.2. Size:191K  inchange semiconductor

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BD501A

isc Silicon NPN Power Transistors BD501/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) 80V(Min) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

Detailed specifications: BD477A, BD477B, BD487, BD488, BD500, BD500A, BD500B, BD501, 2N3906, BD501B, BD505, BD505-1, BD505-5, BD506, BD506-1, BD506-5, BD507

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