BD509 Specs and Replacement
Type Designator: BD509
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO202
BD509 Substitution
BD509 detailed specifications
Detailed specifications: BD506-1 , BD506-5 , BD507 , BD507-1 , BD507-5 , BD508 , BD508-1 , BD508-5 , 2SC1815 , BD509-1 , BD509-5 , BD510 , BD510-1 , BD510-5 , BD515 , BD515-1 , BD515-5 .
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