BD510-1 Specs and Replacement
Type Designator: BD510-1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO202
BD510-1 Substitution
BD510-1 detailed specifications
NO specs!
Detailed specifications: BD507-5 , BD508 , BD508-1 , BD508-5 , BD509 , BD509-1 , BD509-5 , BD510 , 2SA1837 , BD510-5 , BD515 , BD515-1 , BD515-5 , BD516 , BD516-1 , BD516-5 , BD517 .
Keywords - BD510-1 transistor specs
BD510-1 cross reference
BD510-1 equivalent finder
BD510-1 lookup
BD510-1 substitution
BD510-1 replacement

