BD546 Datasheet. Specs and Replacement

Type Designator: BD546  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO218

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BD546 datasheet

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BD546

isc Silicon PNP Power Transistor BD546/A/B/C DESCRIPTION Collector Current -I = -15A C Collector-Emitter Breakdown Voltage- V = -40V(Min)- BD546; -60V(Min)- BD546A (BR)CEO -80V(Min)- BD546B; -100V(Min)- BD546C Complement to Type BD545/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒

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BD546

BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD545 Series (TOP VIEW) 85 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temper... See More ⇒

Detailed specifications: BD544B, BD544C, BD544D, BD545, BD545A, BD545B, BD545C, BD545D, S8550, BD546A, BD546B, BD546C, BD546D, BD550, BD550A, BD550B, BD561

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