BD546B Datasheet, Equivalent, Cross Reference Search
Type Designator: BD546B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO218
BD546B Transistor Equivalent Substitute - Cross-Reference Search
BD546B Datasheet (PDF)
bd546 bd546a bd546b bd546c.pdf
isc Silicon PNP Power Transistor BD546/A/B/CDESCRIPTIONCollector Current -I = -15ACCollector-Emitter Breakdown Voltage-: V = -40V(Min)- BD546; -60V(Min)- BD546A(BR)CEO-80V(Min)- BD546B; -100V(Min)- BD546CComplement to Type BD545/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
bd546-a-b-c.pdf
BD546, BD546A, BD546B, BD546CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD545 Series(TOP VIEW) 85 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temper
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
