All Transistors. BD550A Datasheet

 

BD550A Datasheet and Replacement


   Type Designator: BD550A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 175 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BD550A Datasheet (PDF)

 9.1. Size:182K  inchange semiconductor
 bd550b.pdf pdf_icon

BD550A

isc Silicon NPN Power Transistors BD550BDESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 9.2. Size:183K  inchange semiconductor
 bd550.pdf pdf_icon

BD550A

isc Silicon NPN Power Transistors BD550DESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Datasheet: BD545C , BD545D , BD546 , BD546A , BD546B , BD546C , BD546D , BD550 , S8550 , BD550B , BD561 , BD562 , BD566 , BD566A , BD567 , BD567A , BD575 .

History: SDTC124EET1G | DDTC144VUA | PBSS4580PA | MJ4238 | KT9139A | KT885B | FJYF2906

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