BD550A PDF Specs and Replacement
Type Designator: BD550A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 175 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BD550A Substitution
BD550A PDF detailed specifications
bd550b.pdf
isc Silicon NPN Power Transistors BD550B DESCRIPTION High Power Dissipation Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
bd550.pdf
isc Silicon NPN Power Transistors BD550 DESCRIPTION High Power Dissipation Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
Detailed specifications: BD545C , BD545D , BD546 , BD546A , BD546B , BD546C , BD546D , BD550 , B772 , BD550B , BD561 , BD562 , BD566 , BD566A , BD567 , BD567A , BD575 .
History: 2SB1438
Keywords - BD550A pdf specs
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History: 2SB1438
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