BD550A Datasheet, Equivalent, Cross Reference Search
Type Designator: BD550A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 175 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BD550A Transistor Equivalent Substitute - Cross-Reference Search
BD550A Datasheet (PDF)
bd550b.pdf
isc Silicon NPN Power Transistors BD550BDESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
bd550.pdf
isc Silicon NPN Power Transistors BD550DESCRIPTION High Power DissipationCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as either driver or output unit applicationsin audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
