BD610 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD610
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD610 Transistor Equivalent Substitute - Cross-Reference Search
BD610 Datasheet (PDF)
pmbd6100 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD6100High-speed double diode1999 May 11Product specificationSupersedes data of 1996 Sep 18Philips Semiconductors Product specificationHigh-speed double diode PMBD6100FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6100 consists of twoPIN DESCRIPTIONhigh-speed switching diodes with High sw
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .