BD610 Datasheet. Specs and Replacement
Type Designator: BD610 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
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BD610 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6100 High-speed double diode 1999 May 11 Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6100 consists of two PIN DESCRIPTION high-speed switching diodes with High sw... See More ⇒
Detailed specifications: BD600, BD601, BD602, BD605, BD606, BD607, BD608, BD609, 2SD669, BD611, BD612, BD613, BD614, BD615, BD616, BD617, BD618
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