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BD610 Specs and Replacement


   Type Designator: BD610
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 BD610 Transistor Equivalent Substitute - Cross-Reference Search

   

BD610 detailed specifications

 0.1. Size:63K  philips
 pmbd6100 3.pdf pdf_icon

BD610

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6100 High-speed double diode 1999 May 11 Product specification Supersedes data of 1996 Sep 18 Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6100 consists of two PIN DESCRIPTION high-speed switching diodes with High sw... See More ⇒

Detailed specifications: BD600 , BD601 , BD602 , BD605 , BD606 , BD607 , BD608 , BD609 , 2SD669 , BD611 , BD612 , BD613 , BD614 , BD615 , BD616 , BD617 , BD618 .

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