BD610 Datasheet and Replacement
Type Designator: BD610
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
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BD610 Datasheet (PDF)
pmbd6100 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD6100High-speed double diode1999 May 11Product specificationSupersedes data of 1996 Sep 18Philips Semiconductors Product specificationHigh-speed double diode PMBD6100FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6100 consists of twoPIN DESCRIPTIONhigh-speed switching diodes with High sw
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: D11C1053 | UN621K | KRA567U | ZTX300 | CHDTA115TEGP | BD544D | MMBT5816
Keywords - BD610 transistor datasheet
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History: D11C1053 | UN621K | KRA567U | ZTX300 | CHDTA115TEGP | BD544D | MMBT5816



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