BD610 Datasheet and Replacement
Type Designator: BD610
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
BD610 Substitution
BD610 Datasheet (PDF)
pmbd6100 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD6100High-speed double diode1999 May 11Product specificationSupersedes data of 1996 Sep 18Philips Semiconductors Product specificationHigh-speed double diode PMBD6100FEATURES DESCRIPTION PINNING Small plastic SMD package The PMBD6100 consists of twoPIN DESCRIPTIONhigh-speed switching diodes with High sw
Datasheet: BD600 , BD601 , BD602 , BD605 , BD606 , BD607 , BD608 , BD609 , BC549 , BD611 , BD612 , BD613 , BD614 , BD615 , BD616 , BD617 , BD618 .
History: 2SA1753 | 2SA2022 | UMG5N | SK3194 | BFY67 | BDY13B | 2SC3953D
Keywords - BD610 transistor datasheet
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History: 2SA1753 | 2SA2022 | UMG5N | SK3194 | BFY67 | BDY13B | 2SC3953D



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