BD643F Datasheet. Specs and Replacement

Type Designator: BD643F  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 62 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220F

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BD643F datasheet

 ..1. Size:214K  inchange semiconductor

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BD643F

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD643F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BD644F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 9.1. Size:331K  comset

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BD643F

SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

 9.2. Size:194K  inchange semiconductor

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BD643F

isc Silicon NPN Darlington Power Transistor BD643 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Complement to Type BD644 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output st... See More ⇒

Detailed specifications: BD620, BD633, BD634, BD635, BD636, BD637, BD638, BD643, BDT88, BD644, BD644F, BD645, BD645F, BD646, BD646F, BD647, BD647F

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