BD643F Datasheet, Equivalent, Cross Reference Search
Type Designator: BD643F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 62 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220F
BD643F Transistor Equivalent Substitute - Cross-Reference Search
BD643F Datasheet (PDF)
bd643f.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BD643FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BD644FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
bd643-bd645-bd647-bd649-bd651.pdf
SEMICONDUCTORSBD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings
bd643.pdf
isc Silicon NPN Darlington Power Transistor BD643DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageComplement to Type BD644Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputst
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
