BD702 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD702
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD702 Transistor Equivalent Substitute - Cross-Reference Search
BD702 Datasheet (PDF)
..1. Size:201K inchange semiconductor
bd702.pdf
bd702.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BD702DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -100V(Min.)DC Current Gain: h = 750(Min) @ I = -3AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for output devices in complementary general-
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
