BD702 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD702
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD702 Transistor Equivalent Substitute - Cross-Reference Search
BD702 Datasheet (PDF)
..1. Size:201K inchange semiconductor
bd702.pdf
bd702.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BD702DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -100V(Min.)DC Current Gain: h = 750(Min) @ I = -3AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for output devices in complementary general-
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
