BD702 Specs and Replacement
Type Designator: BD702
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD702 Substitution
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BD702 datasheet
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD702 DESCRIPTION Collector Emitter Sustaining Voltage V = CEO(SUS) -100V(Min.) DC Current Gain h = 750(Min) @ I = -3A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for output devices in complementary general-... See More ⇒
Detailed specifications: BD697A, BD698, BD698A, BD699, BD699A, BD700, BD700A, BD701, 2SB817, BD705, BD706, BD707, BD708, BD709, BD710, BD711, BD712
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