BD702 Datasheet and Replacement
Type Designator: BD702
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD702 Substitution
BD702 Datasheet (PDF)
bd702.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BD702DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -100V(Min.)DC Current Gain: h = 750(Min) @ I = -3AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for output devices in complementary general-
Datasheet: BD697A , BD698 , BD698A , BD699 , BD699A , BD700 , BD700A , BD701 , 2N4401 , BD705 , BD706 , BD707 , BD708 , BD709 , BD710 , BD711 , BD712 .
History: 2SA1404 | MJE15036 | 2S116 | GES3415 | 2N381 | HN1A01F | MMDTA42
Keywords - BD702 transistor datasheet
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History: 2SA1404 | MJE15036 | 2S116 | GES3415 | 2N381 | HN1A01F | MMDTA42



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