BD706 Specs and Replacement
Type Designator: BD706
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO66
BD706 Substitution
- BJT ⓘ Cross-Reference Search
BD706 datasheet
isc Silicon PNP Power Transistor BD706 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min.) CEO(SUS) Complement to Type BD705 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒
Detailed specifications: BD698A, BD699, BD699A, BD700, BD700A, BD701, BD702, BD705, 2SC2655, BD707, BD708, BD709, BD710, BD711, BD712, BD719, BD720
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