All Transistors. BD706 Datasheet

 

BD706 Datasheet and Replacement


   Type Designator: BD706
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO66
 

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BD706 Datasheet (PDF)

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BD706

isc Silicon PNP Power Transistor BD706DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min.)CEO(SUS)Complement to Type BD705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =

Datasheet: BD698A , BD699 , BD699A , BD700 , BD700A , BD701 , BD702 , BD705 , 8550 , BD707 , BD708 , BD709 , BD710 , BD711 , BD712 , BD719 , BD720 .

History: 2SA1196 | BD707 | 2N1337 | BD701 | 2N3879SM

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