BD706 Datasheet and Replacement
Type Designator: BD706
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
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BD706 Datasheet (PDF)
bd706.pdf

isc Silicon PNP Power Transistor BD706DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min.)CEO(SUS)Complement to Type BD705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SB553Y | 2SB492 | 2SB448 | BCP5516TA | TP4275 | 2SB553O | 2SB559E
Keywords - BD706 transistor datasheet
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History: 2SB553Y | 2SB492 | 2SB448 | BCP5516TA | TP4275 | 2SB553O | 2SB559E



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