All Transistors. BD706 Datasheet

 

BD706 Datasheet and Replacement


   Type Designator: BD706
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO66
 

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BD706 Datasheet (PDF)

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BD706

isc Silicon PNP Power Transistor BD706DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min.)CEO(SUS)Complement to Type BD705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

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