BD725 Specs and Replacement
Type Designator: BD725
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
BD725 Substitution
BD725 datasheet
bd719 bd721 bd723 bd725.pdf
isc Silicon NPN Power Transistor BD719/721/723/725 DESCRIPTION DC Current Gain- h = 20(Min)@ I = 2A FE C Complement to Type BD720/722/724/726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
bd725.pdf
isc Silicon NPN Power Transistor BD725 DESCRIPTION DC Current Gain- h = 40@ I = 0.5A FE C Collector-Emitter Breakdown Voltage - V = 120V(Min) (BR)CEO Complement to type BD726 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: BD711 , BD712 , BD719 , BD720 , BD721 , BD722 , BD723 , BD724 , 2SA1015 , BD726 , BD733 , BD734 , BD735 , BD736 , BD737 , BD738 , BD743 .
History: 2SB1399 | CSD363 | 2SD1616
Keywords - BD725 pdf specs
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History: 2SB1399 | CSD363 | 2SD1616
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