BD735 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD735
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220
BD735 Transistor Equivalent Substitute - Cross-Reference Search
BD735 Datasheet (PDF)
bd735.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD735 DESCRIPTION DC Current Gain - : hFE = 40(Min.)@ IC= 20mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) Complement to Type BD736 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Coll
Datasheet: BD721 , BD722 , BD723 , BD724 , BD725 , BD726 , BD733 , BD734 , D667 , BD736 , BD737 , BD738 , BD743 , BD743A , BD743B , BD743C , BD743D .