BD735 Specs and Replacement
Type Designator: BD735
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220
BD735 Substitution
- BJT ⓘ Cross-Reference Search
BD735 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD735 DESCRIPTION DC Current Gain - hFE = 40(Min.)@ IC= 20mA Collector-Emitter Breakdown Voltage- V(BR)CEO= 35V(Min.) Complement to Type BD736 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Coll... See More ⇒
Detailed specifications: BD721, BD722, BD723, BD724, BD725, BD726, BD733, BD734, 2SC2383, BD736, BD737, BD738, BD743, BD743A, BD743B, BD743C, BD743D
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