All Transistors. BD735 Datasheet

 

BD735 Datasheet and Replacement


   Type Designator: BD735
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO220
 

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BD735 Datasheet (PDF)

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BD735

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD735 DESCRIPTION DC Current Gain - : hFE = 40(Min.)@ IC= 20mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) Complement to Type BD736 APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Coll

Datasheet: BD721 , BD722 , BD723 , BD724 , BD725 , BD726 , BD733 , BD734 , 2SC828 , BD736 , BD737 , BD738 , BD743 , BD743A , BD743B , BD743C , BD743D .

History: CP401 | IMZ1AFRA | KSC1675R | SBC847CLT1G | P308

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