BD738 Specs and Replacement

Type Designator: BD738

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO220

 BD738 Substitution

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BD738 datasheet

 ..1. Size:210K  inchange semiconductor

 bd738.pdf pdf_icon

BD738

isc Silicon PNP Power Transistor BD738 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -20mA FE C Collector-Emitter Breakdown Voltage- V = -45V(Min.) (BR)CEO Complement to Type BD737 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒

Detailed specifications: BD724, BD725, BD726, BD733, BD734, BD735, BD736, BD737, 2N2907, BD743, BD743A, BD743B, BD743C, BD743D, BD743E, BD743F, BD744

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