All Transistors. BD778 Datasheet

 

BD778 Datasheet, Equivalent, Cross Reference Search

Type Designator: BD778

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

BD778 Transistor Equivalent Substitute - Cross-Reference Search

 

BD778 Datasheet (PDF)

1.1. bd776 bd777 bd778 bd780.pdf Size:117K _motorola

BD778
BD778

Order this document MOTOROLA by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 Plastic Darlington PNP BD776 Complementary Silicon Power Transistors BD778 . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain BD780* hFE = 1400 (Typ) @ IC = 2.0 Adc • Collector–Emitter Sustaining Voltage — @ 10 mAdc *Motorola Preferred Device VCEO

Datasheet: BD750C , BD751 , BD751A , BD751B , BD751C , BD775 , BD776 , BD777 , MJE13003 , BD779 , BD780 , BD785 , BD786 , BD787 , BD788 , BD789 , BD790 .

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