All Transistors. BD791 Datasheet

 

BD791 Datasheet and Replacement


   Type Designator: BD791
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT23
 

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BD791 Datasheet (PDF)

 ..1. Size:176K  motorola
 bd789 bd790 bd791 bd792.pdf pdf_icon

BD791

Order this documentMOTOROLAby BD789/DSEMICONDUCTOR TECHNICAL DATANPNBD789Complementary Plastic Silicon*BD791Power TransistorsPNP. . . designed for low power audio amplifier and lowcurrent, high speed switchingBD790applications. High CollectorEmitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) BD789, BD790BD792*VCEO(sus) = 100 Vdc (Min) BD791

 ..2. Size:208K  inchange semiconductor
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BD791

isc Silicon NPN Power Transistor BD791DESCRIPTIONHigh CollectorEmitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdchFE = 40250 Low CollectorEmitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdcMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Datasheet: BD779 , BD780 , BD785 , BD786 , BD787 , BD788 , BD789 , BD790 , S9014 , BD792 , BD795 , BD796 , BD797 , BD798 , BD799 , BD800 , BD801 .

History: GET891 | 2N5827 | FMG5A | HP122 | RN4982 | 2SA313 | BLD133DL

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