BD791 Specs and Replacement

Type Designator: BD791

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

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BD791 datasheet

 ..1. Size:176K  motorola

 bd789 bd790 bd791 bd792.pdf pdf_icon

BD791

Order this document MOTOROLA by BD789/D SEMICONDUCTOR TECHNICAL DATA NPN BD789 Complementary Plastic Silicon * BD791 Power Transistors PNP . . . designed for low power audio amplifier and low current, high speed switching BD790 applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) BD789, BD790 BD792* VCEO(sus) = 100 Vdc (Min) BD791... See More ⇒

 ..2. Size:208K  inchange semiconductor

 bd791.pdf pdf_icon

BD791

isc Silicon NPN Power Transistor BD791 DESCRIPTION High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc hFE = 40 250 Low Collector Emitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo... See More ⇒

Detailed specifications: BD779, BD780, BD785, BD786, BD787, BD788, BD789, BD790, 2SC2073, BD792, BD795, BD796, BD797, BD798, BD799, BD800, BD801

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