All Transistors. BD798 Datasheet

 

BD798 Datasheet and Replacement


   Type Designator: BD798
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

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BD798 Datasheet (PDF)

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BD798

isc Silicon PNP Power Transistor BD798DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Saturation VoltageComplement to Type BD797Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulators

Datasheet: BD788 , BD789 , BD790 , BD791 , BD792 , BD795 , BD796 , BD797 , MJE340 , BD799 , BD800 , BD801 , BD802 , BD805 , BD806 , BD807 , BD808 .

History: MJE2901T

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