All Transistors. BD799 Datasheet

 

BD799 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD799
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220

 BD799 Transistor Equivalent Substitute - Cross-Reference Search

   

BD799 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
 bd799.pdf

BD799 BD799

isc Silicon NPN Power Transistor BD799DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Saturation VoltageComplement to Type BD800Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulators

Datasheet: BD789 , BD790 , BD791 , BD792 , BD795 , BD796 , BD797 , BD798 , S8550 , BD800 , BD801 , BD802 , BD805 , BD806 , BD807 , BD808 , BD809 .

 

 
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