BD799 Specs and Replacement

Type Designator: BD799

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 BD799 Substitution

- BJT ⓘ Cross-Reference Search

 

BD799 datasheet

 ..1. Size:208K  inchange semiconductor

 bd799.pdf pdf_icon

BD799

isc Silicon NPN Power Transistor BD799 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Saturation Voltage Complement to Type BD800 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators ... See More ⇒

Detailed specifications: BD789, BD790, BD791, BD792, BD795, BD796, BD797, BD798, MJE340, BD800, BD801, BD802, BD805, BD806, BD807, BD808, BD809

Keywords - BD799 pdf specs

 BD799 cross reference

 BD799 equivalent finder

 BD799 pdf lookup

 BD799 substitution

 BD799 replacement