All Transistors. BD801 Datasheet

 

BD801 Datasheet and Replacement


   Type Designator: BD801
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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BD801 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
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BD801

isc Silicon NPN Power Transistor BD801DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Saturation VoltageComplement to Type BD802Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulators

 0.1. Size:93K  motorola
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BD801

Order this documentMOTOROLAby BD801/DSEMICONDUCTOR TECHNICAL DATABD801Plastic High Power Silicon NPN8 AMPERETransistorPOWER TRANSISTORSNPN SILICON. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi100 VOLTScomplementary circuits.65 WATTS DC Current Gain hFE = 40 (Min) @ IC = 1.0 Adc

Datasheet: BD791 , BD792 , BD795 , BD796 , BD797 , BD798 , BD799 , BD800 , TIP35C , BD802 , BD805 , BD806 , BD807 , BD808 , BD809 , BD810 , BD813 .

History: KT6134B | GES930 | 2SC4442 | RN4981AFS | BF257D | BD109B

Keywords - BD801 transistor datasheet

 BD801 cross reference
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