All Transistors. BD801 Datasheet

 

BD801 Datasheet and Replacement


   Type Designator: BD801
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
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BD801 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
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BD801

isc Silicon NPN Power Transistor BD801DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Saturation VoltageComplement to Type BD802Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulators

 0.1. Size:93K  motorola
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BD801

Order this documentMOTOROLAby BD801/DSEMICONDUCTOR TECHNICAL DATABD801Plastic High Power Silicon NPN8 AMPERETransistorPOWER TRANSISTORSNPN SILICON. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi100 VOLTScomplementary circuits.65 WATTS DC Current Gain hFE = 40 (Min) @ IC = 1.0 Adc

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TP9012NND03 | BCP54 | BCP54-16 | TP4123 | BCF32R | TP2222R | TP5400

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