BD801 Specs and Replacement

Type Designator: BD801

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 BD801 Substitution

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BD801 datasheet

 ..1. Size:209K  inchange semiconductor

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BD801

isc Silicon NPN Power Transistor BD801 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Saturation Voltage Complement to Type BD802 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators... See More ⇒

 0.1. Size:93K  motorola

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BD801

Order this document MOTOROLA by BD801/D SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN 8 AMPERE Transistor POWER TRANSISTORS NPN SILICON . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi 100 VOLTS complementary circuits. 65 WATTS DC Current Gain hFE = 40 (Min) @ IC = 1.0 Adc ... See More ⇒

Detailed specifications: BD791, BD792, BD795, BD796, BD797, BD798, BD799, BD800, BD335, BD802, BD805, BD806, BD807, BD808, BD809, BD810, BD813

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