BD802 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD802
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BD802 Transistor Equivalent Substitute - Cross-Reference Search
BD802 Datasheet (PDF)
bd802.pdf
isc Silicon PNP Power Transistor BD802DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Saturation VoltageComplement to Type BD801Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulator
bd802rev.pdf
Order this documentMOTOROLAby BD802/DSEMICONDUCTOR TECHNICAL DATABD802Plastic High Power Silicon8 AMPEREPNP TransistorPOWER TRANSISTORSPNP SILICON. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi100 VOLTScomplementary circuits.65 WATTS DC Current Gain hFE = 40 (Min) @ IC = 1.0 Adc
Datasheet: BD792 , BD795 , BD796 , BD797 , BD798 , BD799 , BD800 , BD801 , 8050 , BD805 , BD806 , BD807 , BD808 , BD809 , BD810 , BD813 , BD813A .
