All Transistors. BD802 Datasheet

 

BD802 Datasheet and Replacement


   Type Designator: BD802
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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BD802 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
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BD802

isc Silicon PNP Power Transistor BD802DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Saturation VoltageComplement to Type BD801Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulator

 0.1. Size:94K  motorola
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BD802

Order this documentMOTOROLAby BD802/DSEMICONDUCTOR TECHNICAL DATABD802Plastic High Power Silicon8 AMPEREPNP TransistorPOWER TRANSISTORSPNP SILICON. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi100 VOLTScomplementary circuits.65 WATTS DC Current Gain hFE = 40 (Min) @ IC = 1.0 Adc

Datasheet: BD792 , BD795 , BD796 , BD797 , BD798 , BD799 , BD800 , BD801 , B772 , BD805 , BD806 , BD807 , BD808 , BD809 , BD810 , BD813 , BD813A .

History: KT6134B | RN4981AFS | RN4981FE | 2SD611 | GET888 | 2N791 | 2SC4441

Keywords - BD802 transistor datasheet

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