All Transistors. BD807 Datasheet

 

BD807 Datasheet and Replacement


   Type Designator: BD807
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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BD807 Datasheet (PDF)

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BD807

isc Silicon NPN Power Transistor BD807DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type BD808Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary

Datasheet: BD797 , BD798 , BD799 , BD800 , BD801 , BD802 , BD805 , BD806 , 8050 , BD808 , BD809 , BD810 , BD813 , BD813A , BD814 , BD814A , BD815 .

History: 2SC4443 | C720 | BD148-6 | GET104 | BCW45 | MPSA92D | BD367

Keywords - BD807 transistor datasheet

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