BD807 Specs and Replacement
Type Designator: BD807
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
BD807 Substitution
- BJT ⓘ Cross-Reference Search
BD807 datasheet
isc Silicon NPN Power Transistor BD807 DESCRIPTION DC Current Gain - h = 30(Min.)@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type BD808 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary... See More ⇒
Detailed specifications: BD797, BD798, BD799, BD800, BD801, BD802, BD805, BD806, BC546, BD808, BD809, BD810, BD813, BD813A, BD814, BD814A, BD815
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