All Transistors. BD807 Datasheet

 

BD807 Datasheet, Equivalent, Cross Reference Search

Type Designator: BD807

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

BD807 Transistor Equivalent Substitute - Cross-Reference Search

 

BD807 Datasheet (PDF)

1.1. bd807.pdf Size:229K _inchange_semiconductor

BD807
BD807

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD807 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD808 APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATING

Datasheet: BD797 , BD798 , BD799 , BD800 , BD801 , BD802 , BD805 , BD806 , 431 , BD808 , BD809 , BD810 , BD813 , BD813A , BD814 , BD814A , BD815 .

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