All Transistors. BD807 Datasheet

 

BD807 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD807
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220

 BD807 Transistor Equivalent Substitute - Cross-Reference Search

   

BD807 Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
 bd807.pdf

BD807 BD807

isc Silicon NPN Power Transistor BD807DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type BD808Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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