All Transistors. BD808 Datasheet

 

BD808 Datasheet and Replacement


   Type Designator: BD808
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
 

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BD808 Datasheet (PDF)

 ..1. Size:104K  motorola
 bd808 bd810.pdf pdf_icon

BD808

Order this documentMOTOROLAby BD808/DSEMICONDUCTOR TECHNICAL DATABD808BD810*Plastic High Power Silicon*Motorola Preferred DevicePNP Transistor10 AMPERE. . . designed for use in high power audio amplifiers utilizing complementary or quasiPOWER TRANSISTORScomplementary circuits.PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc

 ..2. Size:212K  inchange semiconductor
 bd808.pdf pdf_icon

BD808

isc Silicon PNP Power Transistor BD808DESCRIPTIONDC Current Gain -: h =30@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BD807Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary circ

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FA4L4Z | 2SB1095 | DMA26404 | NTE2550 | 2SD1222 | 2SC3260 | NSD206

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