BD808 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD808
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BD808 Transistor Equivalent Substitute - Cross-Reference Search
BD808 Datasheet (PDF)
bd808 bd810.pdf
Order this documentMOTOROLAby BD808/DSEMICONDUCTOR TECHNICAL DATABD808BD810*Plastic High Power Silicon*Motorola Preferred DevicePNP Transistor10 AMPERE. . . designed for use in high power audio amplifiers utilizing complementary or quasiPOWER TRANSISTORScomplementary circuits.PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc
bd808.pdf
isc Silicon PNP Power Transistor BD808DESCRIPTIONDC Current Gain -: h =30@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BD807Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary circ
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
