BD808 Specs and Replacement
Type Designator: BD808
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
BD808 Substitution
- BJT ⓘ Cross-Reference Search
BD808 datasheet
Order this document MOTOROLA by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon *Motorola Preferred Device PNP Transistor 10 AMPERE . . . designed for use in high power audio amplifiers utilizing complementary or quasi POWER TRANSISTORS complementary circuits. PNP SILICON DC Current Gain hFE = 30 (Min) @ IC = 2.0 Adc ... See More ⇒
isc Silicon PNP Power Transistor BD808 DESCRIPTION DC Current Gain - h =30@ I = -2A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type BD807 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circ... See More ⇒
Detailed specifications: BD798, BD799, BD800, BD801, BD802, BD805, BD806, BD807, TIP35C, BD809, BD810, BD813, BD813A, BD814, BD814A, BD815, BD815A
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