All Transistors. BD809 Datasheet

 

BD809 Datasheet and Replacement


   Type Designator: BD809
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220
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BD809 Datasheet (PDF)

 ..1. Size:224K  onsemi
 bd809 bd810.pdf pdf_icon

BD809

BD809 (NPN),BD810 (PNP)Plastic High PowerSilicon TransistorsThese devices are designed for use in high power audio amplifiersutilizing complementary or quasi complementary circuits. www.onsemi.comFeatures10 AMPERE High DC Current GainPOWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*80 VOLTS90 WATTSMAXIMUM RATINGSPNP NPNRating Symbol Value Un

 ..2. Size:210K  inchange semiconductor
 bd809.pdf pdf_icon

BD809

isc Silicon NPN Power Transistor BD809DESCRIPTIONDC Current Gain -: h =30@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type BD810Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementary circui

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DTA123YUA | 2N6495 | CDT1349 | 2SC3460K | 2SC4439 | 2SD1101 | HSE410

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