BD809 Specs and Replacement

Type Designator: BD809

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 BD809 Substitution

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BD809 datasheet

 ..1. Size:224K  onsemi

 bd809 bd810.pdf pdf_icon

BD809

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. www.onsemi.com Features 10 AMPERE High DC Current Gain POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* 80 VOLTS 90 WATTS MAXIMUM RATINGS PNP NPN Rating Symbol Value Un... See More ⇒

 ..2. Size:210K  inchange semiconductor

 bd809.pdf pdf_icon

BD809

isc Silicon NPN Power Transistor BD809 DESCRIPTION DC Current Gain - h =30@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type BD810 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circui... See More ⇒

Detailed specifications: BD799, BD800, BD801, BD802, BD805, BD806, BD807, BD808, BD135, BD810, BD813, BD813A, BD814, BD814A, BD815, BD815A, BD816

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