All Transistors. 2N2904S Datasheet

 

2N2904S Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N2904S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5

 2N2904S Transistor Equivalent Substitute - Cross-Reference Search

   

2N2904S Datasheet (PDF)

 8.1. Size:73K  st
2n2904-2n2905-2n2906-2n2907.pdf

2N2904S 2N2904S

2N2904/2N29052N2906/2N2907GENERAL PURPOSE AMPLIFIERS AND SWITCHESDESCRIPTIONThe 2N2904, 2N2905, 2N2906 and 2N2907 are si-licon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904, 2N2905) and in Jedec TO-18 (for2N2906 and 2N2907) metal cases. They are desi-gned for high-speed saturated switching and gene-ral purpose applications.2N2904/2N2905 approved to CECC 50002-

 8.2. Size:59K  central
2n2904-a 2n2905-a.pdf

2N2904S

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.3. Size:10K  semelab
2n2904csm.pdf

2N2904S

2N2904CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 60V A =(0.04 0.004

 8.4. Size:10K  semelab
2n2904acsm.pdf

2N2904S

2N2904ACSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 60V A =(0.04 0.00

 8.5. Size:10K  semelab
2n2904dcsm.pdf

2N2904S

2N2904DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 60V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.0

 8.6. Size:146K  cdil
2n2904a 05a.pdf

2N2904S 2N2904S

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904A2N2905ATO-39Switching And Linear Application DC to VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2904A, 05A UNITCollector -Emitter Voltage VCEO 60 VCollector -Base Voltage VCBO 60 VEmitter -Base Voltage VEBO 5.0 V

 8.7. Size:75K  cdil
2n2904 05.pdf

2N2904S 2N2904S

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5 VICCollector Current Continuo

 8.8. Size:51K  kec
2n2904e.pdf

2N2904S 2N2904S

SEMICONDUCTOR 2N2904ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURES1 6 DIM MILLIMETERSLow Leakage Current _A 1.6 + 0.05_A1 1.0 + 0.05: ICEX=50nA(Max.), IBL=50nA(Max.) 52_B 1.6 + 0.05_B1 1.2 + 0.05@VCE=30V, VEB=3V.C 0.503 4Excellent DC Current Gain Linearity. _D 0.2 + 0.05_H 0.5 + 0.05Lo

 8.9. Size:51K  kec
2n2904u1.pdf

2N2904S 2N2904S

SEMICONDUCTOR 2N2904U1TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_Low Leakage Current A 2.00 + 0.20_2 5 A1 1.3 + 0.1: ICEX=50nA(Max.), IBL=50nA(Max.)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1@VCE=30V, VEB=3V.C 0.65Excellent DC Current Gain Linearity.D 0.2+0.10/-0.05G 0-0.1Low Sa

 8.10. Size:51K  kec
2n2904u.pdf

2N2904S 2N2904S

SEMICONDUCTOR 2N2904UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_Low Leakage Current A 2.00 + 0.20_2 5 A1 1.3 + 0.1: ICEX=50nA(Max.), IBL=50nA(Max.)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1@VCE=30V, VEB=3V.C 0.65Excellent DC Current Gain Linearity.D 0.2+0.10/-0.05G 0-0.1Low Sat

 8.11. Size:756K  microsemi
2n2904 2n2904a 2n2905 2n2905a.pdf

2N2904S 2N2904S

2N2904(A) and 2N2905(A) Qualified Levels: PNP SWITCHING SILICON JAN, JANTX, JANTXV Available on TRANSISTOR and JANS commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications. These devices are also available in a TO-5 package. Mic

Datasheet: 2N2902 , 2N2903 , 2N2903A , 2N2904 , 2N2904A , 2N2904AL , 2N2904AS , 2N2904L , D880 , 2N2905 , 2N2905A , 2N2905AL , 2N2905L , 2N2905S , 2N2906 , 2N2906A , 2N2906ACSM .

 

 
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